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    二次射线照相法计算支撑绝缘子缺陷尺寸

    Calculation of the Defect Size of Support Insulator Defects Size by Secondary Radiography

    • 摘要: 将设备缺陷分成表面缺陷与内部缺陷两种情况进行讨论,表面缺陷尺寸直接利用三角形相似定理进行计算,而内部缺陷则需用二次透照方法所得的图形利用两次三角形相似定理进行计算。最后将设备解体(即打开罐体)后直接对缺陷进行测量,将这直接测量值与以前透照方法所得的计算值进行比较,验证了该方法的准确性。

       

      Abstract: The device defect is divided into two cases of surface defects and internal defects to discuss, the surface defect size direct use of triangle similarity theorem to calculate, the internal defects use secondary radiographic methods and two triangles similarity to calculate. Finally, the defect measure by the disintegration of equipment and then verify the accuracy of the method.

       

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