基于磁畴聚合模型的磁记忆效应机理研究

基金项目:

江西省教育厅重点项目(赣教技字05-312号)；无损检测技术重点实验室开放基金资助项目(ZD200629001)；江西省教育厅科技项目(赣教技字［2006］172号)

详细信息

Study on the Mechanism of Magnetic Memory Effect Based on Polymerization Model of Magnetic Domain

摘要: 研究了铁磁构件在受载时产生磁记忆效应的机理。结合试件的断裂机制和位错理论，分析了试件组织的微观变化。建立畴壁聚合模型，探讨了构件形成的有取向的宏观磁化。在应力集中区域或微观损伤区域建立带磁偶极子模型，计算试件表面的泄漏磁场。结果表明，畴壁聚合模型可以解释应力集中区域或微观损伤区域的磁场变化。
- 磁记忆检测 /
- 磁畴聚合模型 /
- 基础理论分析
Abstract: The mechanism of magnetic memory effect on ferromagnetic material under loading was studied. By fracture mechanism and dislocation theory, the polymerization model of magnetic domain wall was presented on the basis of the analysis of microstructure changes. The oriented magnetization of specimen was viewed also, and then the magnetic flux leakage of specimen in the stress concentration area or microstructure damage area through magnetic dipole model was calculated. Results showed that, magnetic changes in the stress concentration area or microstructure damage area could be explained by polymerization model of magnetic domain wall.
- Magnetic memory testing /
- Polymerization model of magnetic domain /
- Basic theory analysis

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