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    GUO Tie-Qiao, GUO Tao-Tao, WANG Da-Da, GAO Kuo, YU hong, WU Zhang-Qin. Calculation of the Defect Size of Support Insulator Defects Size by Secondary Radiography[J]. Nondestructive Testing, 2013, 35(5): 78-80.
    Citation: GUO Tie-Qiao, GUO Tao-Tao, WANG Da-Da, GAO Kuo, YU hong, WU Zhang-Qin. Calculation of the Defect Size of Support Insulator Defects Size by Secondary Radiography[J]. Nondestructive Testing, 2013, 35(5): 78-80.

    Calculation of the Defect Size of Support Insulator Defects Size by Secondary Radiography

    • The device defect is divided into two cases of surface defects and internal defects to discuss, the surface defect size direct use of triangle similarity theorem to calculate, the internal defects use secondary radiographic methods and two triangles similarity to calculate. Finally, the defect measure by the disintegration of equipment and then verify the accuracy of the method.
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